Annealing temperature Dependence of the Structural and Electrical Properties of Cu In Se2 Thin Films

الملخص

CulnSe2 thin films were prepared under vacuum by conventional evaporation
method .The films were heat treated at different annealing temperatures up to
723 K .X-ray diffraction of the films indicated that films are polycrystalline
with tetragonal phase.

The variation of the calculated lattice parameters and mean grain size with
annealing temperatures were showed .The electrical properties of CulnSe2
thin films were studied at different annealing temperatures .The dark
conductivity of the films was measured as a function of temperature .Two
regions were obtained corresponding to two activation energies. The
activation energy decreases with increasing the annealing temperature.
Increasing the anneal